数字逻辑电路与系统
19The parameters of CMOS device D1 are: VOHmax=384V, VOLmax=033V, VIHmax=18V, VILmax=09V, IOH(max)=-4mA,IOL(max)=4mA, IIH=1uA, IIL=-1uA The parameters of CMOS device D2 are: VOHmax=28V, VOLmax=04V, VIHmax=20V, VILmax=08V, IOL(max)=8mA, IOH(max)=-40